Indium nitride

• Indium (III ) nitride
• Indiumstickstoff

Black solid

Fixed

6.89 g · cm -3

1100 ° C.

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Production and representation

Indium nitride can be obtained by reaction of Ammoniumhexafluoroindat with ammonia at 580 to 600 ° C.

Properties

Indium nitride is a black, air-stable solid. It will not be dissolved by aqueous sodium hydroxide solution and concentrated sulfuric acid from the other mineral acids it. It has a crystal structure of wurtzite - type (a = 35.33 pm, c = 56.93 pm ). The compound is a III-V compound semiconductor, which is formed from indium and nitrogen. Potential future applications of this material are in combinations with gallium nitride in the field of solar cells.

The temperature-dependent band gap of InN is about 0.7 eV at 300 K and in the infrared spectral range. Indium gallium nitride forms the ternary compound semiconductor indium gallium nitride, whose band gap in the manufacturing process by the ratio of the two components over a very wide range from 0.7 to 3.4 eV is selected.

Thin polycrystalline structures of indium nitride show at temperatures below T c = 3.3 K superconducting properties, which remain under the influence of high magnetic flux densities.