Tantalum nitride

• Tantalum (III ) nitride
• Tantalmononitrid

Gray, odorless solid

Fixed

14.3 g · cm -3

2950 ° C

Insoluble in water

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Tantalum nitrides are ceramic compounds of tantalum and nitrogen. They occur in several modifications and oxidation states ( α - TaN, ε - TaN, Ta 2 N, Ta3N5, Ta4N5, Ta5N6 ). The most often used Tantalmononitrid TaN. It is mainly used in chip production as a barrier and adhesion layer (low- K dielectrics ), but is also used in high-precision thin-film resistors are used. In thick-film solar cells are employed tantalum nitride as a diffusion barrier. The material will be deposited by sputtering. Furthermore, tantalum is used as coating material in medical technology or crucibles, since it is resistant to liquid actinide metals.

Production and representation

Tantalum nitride layers can be produced in various ways. The currently most often used method is the sputter deposition of tantalum in the presence of nitrogen ions (reactive sputter deposition ). The research is currently the deposition of tantalum nitride using the chemical vapor deposition or atomic layer deposition. This organometallic reaction gases (precursors ) are needed, which serve as a tantalum source. This calls for a nitrogen source such as ammonia very frequently used, which dissociates at the usual process temperatures of 200-400 ° C. However, there is also the reaction gases as TBTDET ( t- Butylimido -tris ( diethylamido ) tantalum), which serves both as tantalum as a nitrogen source. In addition, there still produce countless other ways tantalum nitride layers, such as ion implantation of nitrogen in the tantalum layer.

Tantalum ( V) nitride Ta3N5 composite valenzmäßig as, non-metallic nitride may be represented with ammonium chloride by the reaction of tantalum ( V) oxide with ammonia or tantalum ( V) chloride.