IEEE Daniel E. Noble Award

The IEEE Daniel E. Noble Award for Emerging Technologies is a Technology Award of the IEEE for emerging technologies, based on developments of recent years. He has been awarded since 2001 to individuals or groups of up to three people.

He replaces the contracts awarded since 1919 IEEE Morris N. Liebmann Memorial Award, and is named after Daniel E. Noble ( 1901-1980 ), a Motorola engineer who designed the first FM radio system for the police in any state in the U.S. and installed.

Award winners

Each with official justification

  • 2001: Katsutoshi Izumi, For pioneering development of Separation by Implanted Oxygen ( SIMOX ) technology
  • 2002: Masataka Nakazawa, For pioneering development of 1.48 micron InGaAsP laser diode pumping of erbium- doped fiber amplifiers (EDFA )
  • 2003: Kenichi Iga, For pioneering Developments of surface emitting semiconductor lasers and arrays
  • 2004: Larry J. Hornbeck, For his pioneering work and sustained development of the Digital Micromirror Device, used in projection displays
  • 2005: David L. Harame, For the development of manufacturable silicon germanium HBT bipolar and BiCMOS technologies
  • 2006: Carlos A. Paz de Araujo, For fundamental Contributions and Commercialization in the field of Ferroelectric Random Access Memory ( FeRAM )
  • 2007: Stephen R. Forrest, Richard Henry Friend, Ching W. Tang, For pioneering Contributions to the development of organic light emitting diodes ( OLEDs)
  • 2008: James M. Daughton, Stuart Parkin, Saied Tehrani, For fundamental Contributions to the development of magneto -resistive devices for non- volatile, high density, random access memory
  • 2009: Larry F. Weber, For pioneering Contributions to Plasma Display Technology and its Commercialization
  • 2010: Shinichi Abe, Shoichi Sasaki, Takehisa Yaegashi For pioneering Contributions to the development and market penetration of hybrid electric vehicles ( HEVs ) through the establishment of innovative architectures and control technologies
  • 2011: Mark L. Burgener, Ronald E. Reedy For basic research and development of silicon on sapphire technology culminating in high-yield, Commercially viable integrated circuits
  • 2012: Subramanian S. Iyer, For the development and implementation of embedded DRAM technologies
  • 2014: Gabriel M. Rebeiz, For pioneering Contributions enabling Commercialization of RF MEMS technology and tunable micro -and millimeter - wave systems
Institute of Electrical and Electronics Engineers
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