Indium gallium nitride

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Indium gallium nitride ( InGaN, In x Ga 1 -x N ) is a III -V semiconductors which of the two basic substances gallium indium nitride and is formed. Application of this material are especially in optoelectronics for the realization of the blue, violet and green LEDs and blue- violet laser diodes, which are used in optical storage media such as Blu- ray Disc. It InGaN-based green laser diodes are available. These are combined with the blue and red laser diodes, of interest to future display technology, since the emitted green (approx. 515 nm) is included a larger area in the CIE standard colorimetric system, as was previously the case.

Selectable by the ratio of indium gallium nitride to, the band gap, and thus the emitted color may be selected as part of the manufacturing process in the range of 0.7 eV to 3.37 eV. At a ratio of 2% indium and 98% gallium nitride results in a band gap, which provides for an emission in the near ultraviolet, at 20 % indium and 80% gallium nitride, however, a blue-violet radiation with a wavelength of 420 nm is formed With a ratio 30% / 70 %, the radiation at 440 nm, corresponding to a blue color.

Another application of this semiconductor be in the range of solar cells. In this case, above each other two layers of InGaN can be applied with different mixing ratios, which is possible due to the relative large Störstellentoleranz of the material. The two layers have different band gaps to 1.1 eV and 1.7 eV. The advantage is that thus a larger spectral range of sunlight can be used for energy. The efficiency of these solar cells is theoretically 50%.