Indium gallium phosphide

Indium-gallium phosphide ( InGaP ), also called gallium indium phosphide, a semiconductor material and the name of a group of alloys of indium (In), gallium (Ga) and phosphorous (P). The alloy forms crystals in zinc -blende structure and is among the III -V compound semiconductors. The semiconductor due to the high electron mobility is similar to the related III -V semiconductor indium gallium arsenide, a base material for heterojunction bipolar transistors ( HBT) and HEM transistors ( HEMT) in high-frequency amplifiers used. Other applications are in the field of optoelectronics in solar cells.

Depending on the mixing ratio of the starting materials indium and gallium, it is a notation of the form In1 - x Gax P used where X is the mixing ratio, the band gap of the semiconductor material changed. In the semiconductor technology is the mixing ratio of X = 0.5 in the form of In0, 5Ga0, 5P important because thus the lattice constant of indium gallium phosphide is equal to the lattice constant of gallium arsenide ( GaAs). These two semiconductors are used together to form a so-called tandem solar cells.

In conjunction with the aluminum alloy aluminum gallium indium phosphide ( AlGaInP ) is formed, which in the color range orange, yellow is used as a raw material for ultra bright light emitting diodes ( LED) to green.