Integrated gate-commutated thyristor

The IGC thyristor ( integrated gate - commutated thyristor English, IGCT ) is a further development of the GTO thyristor. IGCT are characterized by these opposite from:

• A reduced Beschaltungsaufwand
• Increase of the maximum heart rates for control
• Better response times in series connection

IGCT tolerated beyond higher voltage rate of rise (dV / dt ), which makes, in most cases the use of snubbers unnecessary.

IGCTs need for turning off a gate current which is higher than the anode current. This short break can be achieved, but also large capacitor banks near the IGCT needed.

IGCT may be symmetrical ( blocking in the reverse direction ) or asymmetric ( breakdown voltage in the reverse direction some 10 V) are executed. The latter are characterized by lower conduction losses and are referred to as A- IGCT. Usually an anti-parallel diode is functionally similar to the co-integrated body diode of a MOSFET and the component then as RC IGCT ( reverse for Conducting ) refers.

The field of application of IGCT converters are high performance. A single module switches in this case typically a few kilo amps in a typical blocking voltage of 4500 V.