Multiple-emitter transistor

The multi-emitter transistor provides a special form of bipolar dar. He has a base (B) and a collector terminal (C ), but in contrast to conventional bipolar transistors, it has several emitter terminals (E1, ..., En) on. Circuitry it is a parallel connection of a plurality of conventional bipolar transistors whose base and collector terminals are combined to form a respective terminal and whose emitter terminals are available separately.

Application

Application are primarily in the region of the bipolar transistor-transistor logic where the multi-emitter transistor in the input stage, for example, NAND gates with up to ten emitter terminals is used. In this application the transistor is operated in the so-called base circuit.

The advantage over single bipolar transistors in parallel is, in particular integrated circuits in the reduced chip area. The applications of multi-emitter transistors are limited to the area of integrated circuits.