Nanoelectronics
As nanoelectronics integrated circuits are referred to, whose structure widths are (smallest, about structuring processes such as lithography realizable dimensions in integrated circuits ) below 100 nm. However, this is only a rough classification and the concept of nanoelectronics is not subject to strict definition, since the transition between microelectronics and nanoelectronics is smooth.
Background
The structures in microelectronics have been getting smaller in recent decades, see Scaling ( microelectronics ). Currently (2011 ) Products with minimum feature sizes of 0.032 microns and 32 nm are produced in microelectronics. This largely remained the same or modified manufacturing principles as 20 years ago are used as the smallest feature sizes in an integrated circuit still amounted to about one micrometer. This trend will continue in the coming years in order to enable higher performance in even smaller parts at even lower costs. Due to this development, this area is often referred to as nano-electronics, which is not based effected by the use of new concepts to known physical effects, but based on "conventional" approaches.
Base material for microelectronics forms for several decades the semiconductor silicon. Is responsible for among other things the control of the single crystal manufacturing process, and especially in combination with its oxide (silicon dioxide), which is used as an insulator material, and has very good adhesion properties on silicon. So far the development of manufacturing processes for silicon crystals now allows the large-scale production of high quality crystals for substrates (wafers) with diameters of 300 mm.
Nevertheless, as always, but more noticeable with decreasing feature sizes leakage currents and quantum effects, it will be necessary in the coming years to integrate new concepts, such as the Y- transistor, and materials in the manufacturing process. Only in this way will it be possible to further increase the performance of electronic components and simultaneously reduce the cost. The end of this development was at several times predicted in the last twenty years, the existing problems, especially held for insurmountable physical limits in the manufacturing process, but could be overcome again and again. However, the "conventional" approaches will be eventually exhausted, and it will be necessary to develop completely new concepts.
An example is the extreme ultraviolet lithography ( EUVL ). For the next decade is expected to continue this miniaturization down to 16 nm and below. The conventional photolithography - current ( 2012) UV light with a wavelength of 193 nm ( argon fluoride excimer laser ) - but then pushes for physical reasons to its limit. In addition, even extensive changes to the existing plant technology are no longer sufficient to meet the technical requirements.
Objectives and fields of application
Objective of nanoelectronics is to miniaturize electronic components to the nanometer range in order to increase computing capacity and ultimately the speed of computer chips. These especially are to be researched and improved the electronic properties of nanostructures. In addition, it is necessary to optimize the structure of computer chips. The laws of quantum physics to be harnessed for the electronics.
Furthermore, the nanoelectronics to better techniques and equipment for the electronics manufacturing and supply through new circuits and components optimize the logic operation, storage and processing of data. It is expected that analogous to the development of microelectronics technological progress in almost all industries has a positive influence and that as a result an even higher functionality of devices will be available at a lower cost.
Fields of application for nanoelectronics are consumer electronics, automation technology, medical technology, mobile communication devices, computers, navigation, sensors, cars and all areas technology -oriented research, in which the highest precision measuring instruments are used.