Plasma-immersion ion implantation

In the plasma immersion ion implantation is a vacuum process for most large scale implantation of ions into solid surfaces. Therefore, it is closely related to the ion implantation. The essential feature is the direct introduction of the materials to be treated in a plasma, hence the term "immersion ". Different synonymous terms or abbreviations are commonly used for the method, some of which are listed below:

• Plasma immersion ion implantation, PIII short, P3I or PI ³; In English, it is called p -triple -i or pi -cube
• Plasma -based ion implantation PBII
• Plasma ion implantation, or shortly PII PI ²
• Engl. plasma ion immersion processing, PIIP
• If the method is applied in combination with a simultaneous layer deposition ( PVD and CVD see ), it is often a "& D " (English ... and deposition) is appended, so for example PIII & D.

Basic principle

The basic principle of plasma immersion ion implantation is to immerse the workpiece in a plasma and extracting by the application of negative high- voltage pulses of ions from the plasma and accelerate toward the workpiece. Wherein the ions are implanted in the workpiece surface. During the high- voltage pulse leads to the formation of a so-called boundary layer, which provides the ions and, starting propagates from the workpiece into the plasma. In the pulse intervals the plasma is regenerated to the workpiece, so again ions are available at the next high-voltage pulse.

To be able to operate plasma immersion ion implantation, one needs a system that consists of the following basic parts:

Swell

• André Anders ( eds.): Handbook of plasma immersion ion implantation and deposition. Wiley, New York, NY, inter alia, 2000, ISBN 0-471-24698-0.