Spin-Transistor

The spin transistor abbreviated spin- FET, is a group of special field effect transistors ( FET) which use the quantum mechanical property of spin of electrons within the Rashba effect. Conventional field effect transistors, which are components of the electronics, use only the electric charge for information storage and amplification of electrical signals.

Spin transistors are assigned to the spintronics a branch of nanotechnology, and are used in applications previously existing for non-volatile information storage in special stores such as magnetoresistive random access memory ( MRAM).

Initial work to spin transistors were made in 1990 years at Bell Laboratories. Spin transistors are in the basic sector of the semiconductor technology part of various research projects, but could not prevail in economically important applications so far.