Gallium arsenide phosphide

Gallium arsenide phosphide ( GaAs 1 - x P x ) is an alloy of III-V compound semiconductor consisting of the two semiconductors, gallium arsenide ( GaAs) and gallium phosphide (GaP ).

Gallium arsenide is used as a material in the field of opto-electronics for the production of red, orange and yellow light emitting diodes ( LED). The specific color is set by the mixing ratio of the two base materials, this is expressed as x in the empirical formula. This allows the band-gap of the semiconductor material to change, thereby influencing its optical properties. To improve the quality of light emitting diodes based on such structures material having a doping of nitrogen ( N ) are used, and the material as GaAsP: N respectively.

When the mixing ratio of x = 0.45 GaAs55P45 has a band gap to 1.98 eV and is commercially available under the CAS number 210471-34-4.