Hideo Hosono

Hideo Hosono (细 野 秀雄Japanese Hideo Hosono, born September 7, 1953 in Kawagoe, Saitama Prefecture, Japan) is a Japanese physicist and discoverer in 2006 of a new class of superconductors, the iron -containing high-temperature superconductors.

Life

Hosono received in 1982 the Ph.D. at the metropoli between University of Tokyo. In the same year he became a Research Associate in 1990 and associate professor at Nagoya Institute of Technology. Later in 1993, he was Associate Professor at the Tōkyō Daigaku Kōgyō. He was Professor of Functional Ceramics Division at the Materials and Structures Laboratory ( MSL) 1999. He was director of the ERATO Hosono Transparent Electro -Active Materials Project project and manages the project COE Nanomaterial Frontier Cultivation for Industrial Collaboration.

His research interests are inorganic materials science and Wide - Gap Semiconductors oxides.

A completely new and unexpected class of high temperature superconductors discovered Hosono in 2006: A mixture of iron, lanthanum, phosphorus and oxygen can be superconducting. What was surprising was the amount of iron atoms, because every other superconducting material becomes normal by sufficiently strong magnetic field.

Hosono has published about 450 papers and is the holder of approximately 70 patents. Since 2013 it is one of Thomson Reuters due to the number of its citations to favorites to a Nobel Prize (Thomson Reuters Citation Laureates ).

Awards

Selected Publications

• Handbook of Transparent Conductors, Ginley, David S.; Hosono, Hideo; Paine, David C. (Eds.), ISBN 978-1-4419-1637-2
• Kawazoe, H., Yasukawa, M.; Yanagi, H., and Hosono, H., P -type electrical conduction in transparent thin films of CuAlO2, Nature, 389, 939 ~ 942 (1997).
• Nomura, K.; Ohta, H.; Ueda, K.; Kamiya, T.; Hirano, M.; Hosono, H. Thin - film transistor fabricated in single -crystalline transparent oxide semiconductor. Science 300, 1269-1272 ( 2003).
• Hayashi, K.; Matsuishi, S.; Kamiya, T.; Hirano, M.; Hosono, H. Light -induced conversion of an insulating refractory oxide into a persistent electronic conductor. Nature 419, 462-465 (2002).
• Matsuishi, S.; Toda, Y.; Miyakawa, M.; Hayashi, K.; Kamiya, K.; Hirano, M.; Tanaka, I.; Hosono, H. High-density electron anion in a nano - porous single crystal: [ Ca24Al28O64 ] 4 ( 4e ). Science 301, 626-629 ( 2003).
• Nomura, K., Ohta, H., Takagi, A.; Kamiya, T.; Hirano, M.; Hosono, H. Room -Temperature Fabrication of Transparent Flexible Thin -film transistor Using Amorphous Oxide Semiconductors, "Nature, 432.488 (2004) ..