Indium antimonide

Silver-gray, odorless solid


5.75 g · cm -3

500 ° C ( decomposition)

Insoluble in water


0.5 mg · m -3 ( Sb). 0.1 mg · m -3 ( in)

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Indium antimonide ( InSb ) is a chemical compound of indium (In) and antimony (Sb). It is one of the III-V semiconductors.


Undoped indium antimonide has at room temperature, the greatest electron mobility of 78,000 cm 2 / (V · s ) of all known semiconductors, resulting in the ( in comparison to other materials), extremely high Hall constant of -2.4 · 10-4 m3 / C explained. It is particularly well suited for the production of very fast electronic switches.

Also indium antimonide used in optoelectronics as a material for infrared sensors, particularly at wavelengths of 1000 nm to 5500 nm

Semiconductor devices of indium antimonide have a built-in voltage below 0.5 V, enabling lower operating voltages and thus lower power losses than silicon with 0.7V.

Production and representation

Indium is formed when melted together, the two high-purity elements:


A layer of indium antimonide between Aluminiumindiumantimonid can serve as a quantum well. This can be very fast switching transistors build. Bipolar transistors can be operated up to 200 GHz, delivering up to a cutoff frequency of 85 GHz and field effect transistors. The companies Intel and QinetiQ develop together based on indium antimonide field effect transistors, whose development is currently (2010 ) is not complete.