plasma ashing

Plasma ashing (also cold - plasma ashing ) referred to in the semiconductor technology, a process for the removal of organic layers, and contamination by the chemical reaction with a plasma of reactive species such as oxygen or fluorine. The method is for example used to remove photoresist masks, for example, after an etching step, when the photoresist mask has served its purpose, or to fail exposed photoresist masks to remove before re- exposure, see Photolithography ( semiconductor technology). The method is also used for the purification of samples / wafers or for trace analysis of metals in organic ( biological ) material.

In the plasma ashing belackte the wafer is in a vacuum condition ( the so-called plasma ashing ), with a plasma of excited monatomic substances, such as oxygen or fluorine are introduced. In this way, the excited particles in the plasma to react at a relatively low temperature with the organic compounds on the wafer, which are oxidized in this manner, in the case of an oxygen plasma. This produces volatile reaction products such as carbon dioxide.

• Semiconductor Technology
• Plasma Physics