Hellmut Fritzsche

Hellmut Fritzsche ( born February 20, 1927 in Berlin ) is a German - American solid-state physicist.

Fritzsche went after graduating from the University of Göttingen in 1952 in the United States. In 1954 he received his doctorate from Purdue University where he was Instructor and Assistant Professor in 1955 in the same year. In 1957 he was an Assistant Professor at the University of Chicago, where he became professor in 1963 and retired in 2004. At times, he was Director of the Physics faculty.

Fritzsche is known to work on the metal -insulator transition doped semiconductors and amorphous ( non-crystalline ) materials, for example amorphous silicon, and in particular the role of incorporated hydrogen in the enhancement of the electronic properties.

From 1967, he was Vice President and Member of the Executive Council of Energy Conversion Devices Incorporated, the development company (for example, solar cells, batteries ) Stanford Ovshinsky, with whom he worked closely on the application of amorphous materials.

In 1989 he was awarded the Oliver E. Buckley Condensed Matter Prize. He holds honorary doctorates from Purdue University.

Writings

  • Publisher: Amorphous silicon and related materials, parts A, B, World Scientific 1989
  • Editor: Transportation, correlation and structural defects, World Scientific 1990
  • Published by David Adler: Localization and metal -insulator transitions, Plenum Press 1985 ( Vol 3 of a Festschrift for Nevill Francis Mott )
  • Electronic phenomena in amorphous semiconductors, Annual Review of Material Science, Vol.2, 1972, S.697 -744
  • Editor Brian Schwartz: Stanford R. Ovshinsky - the science and technology of an american genius, World Scientific 2008
384140
de